SEMiX302GB12Vs Datasheet - Semikron International

SEMiX302GB12Vs IGBT

SEMiX302GB12Vs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 448 342 300 900 -20 20 Tj = 125 °C 10 -40 175 Tc = 25 °C Tc = 80 °C 356 266 300 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 1620 -40 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 2s VGES tpsc Tj IF IFnom Inverse diode SEMi.

SEMiX302GB12Vs Features

* Homogeneous Si

* VCE(sat) with positive temperature coefficient

* High short circuit capability

* UL recognised file no. E63532 Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications

* AC inverter drives

* UPS

* Elect

SEMiX302GB12Vs Datasheet (174.45 KB)

SEMiX302GB12Vs Datasheet Preview — Preview of SEMiX302GB12Vs PDF

Datasheet Details

Part number:

SEMiX302GB12Vs

Manufacturer:

Semikron International

File Size:

174.45 KB

Description:

Igbt.

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