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SEMiX854GB176HDs IGBT

SEMiX854GB176HDs Description

SEMiX854GB176HDs SEMiX® 4s Trench IGBT Modules SEMiX854GB176HDs .

SEMiX854GB176HDs Features

* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient

SEMiX854GB176HDs Applications

* br>
* AC inverter drives
* UPS
* Electronic welders Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C Inverse diode IF T

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