S18-L232B-2
Senba Sensing
501.12kb
Mini smd digital pyroelectric infrared sensors.
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📁 Related Datasheet
S18-05N-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
S18-05N-2 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
S18-05P-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
S18-05P-2 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
S18 - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
(YS)
DATA SHEET
SEMICONDUCTOR
S12 THRU S110
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE- 20 to 100 Volts CURRENT- 1.0 Amperes
FEATURES Plastic pac.
S1805 - Silicon NPN Transistor
(Toshiba)
:
)
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
S1805
DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIERS. RECOMMENDED FOR OUTPUT AMPLIFIER STAGE.
S1806 - Silicon PNP Transistor
(Toshiba)
SILICON PHP EPITAXIAL TYPE (PCT PROCESS)
.
F
S1806
DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIER. RECOMMENDED FOR OUTPUT AMPLIFIER STAGE .
S1807 - Silicon NPN Transistor
(Toshiba)
)
)
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
S1807
PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERSDESIGNED FOR COMPLEMEN.
S1808 - Silicon PNP Transistor
(Toshiba)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR USE IN DRIVER OUTPUT STAGE OF AUDIO AMPLIFIERS.
AND
DESIGNED FOR COMPLEMENTARY USE .
S1812 - Shielded Surface Mount Inductors
(API Delevan)
NU MB ER
IN D (µ UCT H) A ±1 NC 0% E
PA RT
SERIES S1812 IRON CORE
S1812-101K S1812-121K S1812-151K S1812-181K S1812-221K S1812-271K S1812-331K S181.
