* . Low Saturation Voltage : VCE ( sat )=0. 5V(Max. at Ic=500mA . Complementary to S1808. Unit in mm 5.1 MAX. a 55 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction T
S1807
73.20 KB
Silicon npn transistor.
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)
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
S1807
PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERSDESIGNED FOR COMPLEMEN.
📁 Related Datasheet
S1805 - Silicon NPN Transistor
(Toshiba)
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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
S1805
DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIERS. RECOMMENDED FOR OUTPUT AMPLIFIER STAGE.
S1806 - Silicon PNP Transistor
(Toshiba)
SILICON PHP EPITAXIAL TYPE (PCT PROCESS)
.
F
S1806
DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIER. RECOMMENDED FOR OUTPUT AMPLIFIER STAGE .
S1808 - Silicon PNP Transistor
(Toshiba)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR USE IN DRIVER OUTPUT STAGE OF AUDIO AMPLIFIERS.
AND
DESIGNED FOR COMPLEMENTARY USE .
S18 - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
(YS)
DATA SHEET
SEMICONDUCTOR
S12 THRU S110
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE- 20 to 100 Volts CURRENT- 1.0 Amperes
FEATURES Plastic pac.
S18-05N-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
S18-05N-2 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
S18-05P-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
S18-05P-2 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
