* . Complementary to S1837. . 300V Minimum V(br)cEO . Low Saturation Voltage : VcE(sat )=°- 5V(Max. . Small Collector Output Capacitance. 5.1 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector P
S1836
124.29 KB
Silicon npn transistor.
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
S1836
FOR HIGH VOLTAGE AMPLIFIER APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS COLOR TV.
📁 Related Datasheet
S1837 - Silicon PNP Transistor
(Toshiba)
S1837
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
FOR HIGH VOLTAGE AMPLIFIER APPLICATIONSPLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONSCOLOR TV V.
S1838 - Silicon NPN Transistor
(Toshiba)
.
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
DRIVER STAGE AMPLIFIER APPLICATIONSVOLTAGE AMPLIFIER APPLICATIONS-
FEAT [-RES': • Complementary to S1839. •.
S1839 - Silicon PNP Transistor
(Toshiba)
)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
S1839
DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS-
FEATURES: . Complementary to S.
S18 - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
(YS)
DATA SHEET
SEMICONDUCTOR
S12 THRU S110
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE- 20 to 100 Volts CURRENT- 1.0 Amperes
FEATURES Plastic pac.
S18-05N-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
S18-05N-2 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
S18-05P-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
S18-05P-2 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
