* Low Sat «ation Voltage : VfEfsst )==-0.7V(Max. ) at J (>- 500mA . Complement aty to SI 807 MAXIMUM RATINGS (T a=25°C _ CHARACTERISTIC Co llector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipatioxi Junction Tempe
S1808
82.63 KB
Silicon pnp transistor.
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR USE IN DRIVER OUTPUT STAGE OF AUDIO AMPLIFIERS.
AND
DESIGNED FOR COMPLEMENTARY USE .
📁 Related Datasheet
S1805 - Silicon NPN Transistor
(Toshiba)
:
)
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
S1805
DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIERS. RECOMMENDED FOR OUTPUT AMPLIFIER STAGE.
S1806 - Silicon PNP Transistor
(Toshiba)
SILICON PHP EPITAXIAL TYPE (PCT PROCESS)
.
F
S1806
DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIER. RECOMMENDED FOR OUTPUT AMPLIFIER STAGE .
S1807 - Silicon NPN Transistor
(Toshiba)
)
)
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
S1807
PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERSDESIGNED FOR COMPLEMEN.
S18 - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
(YS)
DATA SHEET
SEMICONDUCTOR
S12 THRU S110
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE- 20 to 100 Volts CURRENT- 1.0 Amperes
FEATURES Plastic pac.
S18-05N-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
S18-05N-2 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
S18-05P-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
S18-05P-2 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
