MBR1100, MBR1100_ShanghaiSIM Datasheet - Shanghai SIM-BCD Semiconductor

MBR1100 SCHOTTKY BARRIER RECTIFIER

100 V 1 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 1 Amperes, Ta=25¡æ Maximum Instantaneous Reverse Voltage VR= 103 Volt, Ta=25¡æ Maximum Junction Capacitance @.

MBR1100_ShanghaiSIM-BCDSemiconductor.pdf

MBR1100 Datasheet Preview — This datasheet PDF includes multiple part numbers: MBR1100, MBR1100_ShanghaiSIM. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MBR1100, MBR1100_ShanghaiSIM

Manufacturer:

Shanghai SIM-BCD Semiconductor

File Size:

25.75 KB

Description:

Schottky barrier rectifier.

Note:

This datasheet PDF includes multiple part numbers: MBR1100, MBR1100_ShanghaiSIM.
Please refer to the document for exact specifications by model.

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TAGS

MBR1100 MBR1100_ShanghaiSIM SCHOTTKY BARRIER RECTIFIER Shanghai SIM-BCD Semiconductor

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