The MBR1100 by Shanghai SIM-BCD Semiconductor is a SCHOTTKY BARRIER RECTIFIER. Below is the official datasheet preview.
| Part number | MBR1100, MBR1100_ShanghaiSIM |
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| Manufacturer | Shanghai SIM-BCD Semiconductor |
| File Size | 25.75 KB |
| Description | SCHOTTKY BARRIER RECTIFIER |
| Datasheet |
 MBR1100_ShanghaiSIM-BCDSemiconductor.pdf
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| Note |
This datasheet PDF includes multiple part numbers: MBR1100, MBR1100_ShanghaiSIM. Please refer to the document for exact specifications by model. |
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100 V 1 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 1 Amperes, Ta=25¡æ Maximum Instantaneous Reverse Voltage VR= 103 Volt, Ta=25¡æ Maximum Junction Capacitance @ 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive Peak Surge Current Operating Junction Temperature Storage Temperatures SYM VRRM IFAV VF MAX TYPE: MBR1100 (RSingle ¡õ Dual) Anode Spec.
📁 MBR1100 Similar Datasheet
