LH532000B Datasheet - Sharp Electrionic Components

LH532000B CMOS 2M (256K x 8/128K x 16) MROM

The LH532000B is a 2M-bit mask-programmable ROM with two programmable memory organizations, byte and word modes. It is fabricated using silicon-gate CMOS process technology. CMOS 2M (256K × 8/128K × 16) MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW OE1/OE1/DC A7 A6 A5 A4 A3 A2 A1 A0 CE GND O.

LH532000B Features

* 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode)

* BYTE input pin selects bit configuration

* Access times: 120/150 ns (MAX.)

* Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)

* Programmabl

LH532000B_SharpElectrionicComponents.pdf