LH5324C00
Sharp Electrionic Components
53.20kb
Cmos 24m (1.5m x 16) mrom. The LH5324C00 is a 24M-bit mask-programmable ROM organized as 1,572,864 × 16 bits. It is fabricated using silicon-gate CMOS process t
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LH5324000 - CMOS 24M (3M x 8) MROM
(Sharp Electrionic Components)
LH5324000
FEATURES • 3,145,728 × 8 bit organization • Access time: 150 ns (MAX.) • Supply current: – Operating: 65 mA (MAX.) – Standby: 100 µA (MAX.) .
LH5324500 - CMOS 24M (3M x 8/1.5M x 16) MROM
(Sharp Electrionic Components)
LH5324500
FEATURES • 3,145,728 words × 8 bit organization (Byte mode) 1,572,864 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) •.
LH5324P00A - CMOS 24M (3M x 8/1.5M x 16) Mask-Programmable ROM
(Sharp Electrionic Components)
PRELIMINARY
LH5324P00A
FEATURES • 3,145,728 words × 8 bit organization (Byte mode) 1,572,864 words × 16 bit organization (Word mode) • Access time: 1.
LH532000B - CMOS 2M (256K x 8/128K x 16) MROM
(Sharp Electrionic Components)
LH532000B
FEATURES • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • BYTE input pin selects bit confi.
LH532000B-1 - CMOS 2M (256K x 8/128K x 16) MROM
(Sharp Electrionic Components)
LH532000B-1
FEATURES • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • P.
LH532048 - CMOS 2M (128K x 16) MROM
(Sharp Electrionic Components)
LH532048
FEATURES • 131,072 words × 16 bit organization • Access time: 100 ns (MAX.) • Static operation • TTL patible I/O • Three-state outputs • S.
LH532100B - CMOS 2M (256K x 8) MROM
(Sharp Electrionic Components)
LH532100B
FEATURES • 262,144 words × 8 bit organization • Access time: 150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 µW.
LH532100B-1 - CMOS 2M (256K x 8) MROM
(Sharp Electrionic Components)
LH532100B-1
FEATURES • 262,144 words × 8 bit organization • Access time: 120 ns (MAX.) • Static operation • TTL patible I/O • Three-state outputs •.
LH53259 - CMOS 256K (32K x 8) MROM
(Sharp Electrionic Components)
LH53259
FEATURES • 32,768 words × 8 bit organization • Access time: 150 ns (MAX.) • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 µW .
LH532600 - CMOS 2M (256K x 8/128K x 16) MROM
(Sharp Electrionic Components)
LH532600
FEATURES • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • Access time: 100 ns (MAX.) • Stat.