LH532000B-1 Datasheet - Sharp Electrionic Components

LH532000B-1 CMOS 2M (256K x 8/128K x 16) MROM

The LH532000B-1 is a CMOS 2M-bit mask-programmable ROM organized as 262,144 × 8 bits (Byte mode) or 131,072 × 16 bits (Word mode) that can be selected by BYTE input pin. It is fabricated using silicon-gate CMOS process technology. CMOS 2M (256K × 8/128K × 16) MROM PIN CONNECTIONS 40-PIN DIP 40-PIN .

LH532000B-1 Features

* 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode)

* Access time: 120 ns (MAX.)

* Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)

* Mask-programmable control pin (for 40-pin DIP/40-pin SOP): Pin 1 = OE1/

LH532000B-1_SharpElectrionicComponents.pdf