LH532100B Datasheet - Sharp Electrionic Components

LH532100B CMOS 2M (256K x 8) MROM

The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate CMOS process technology. PIN CONNECTIONS 32-PIN DIP 32-PIN SOP OE1/OE1/DC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 2.

LH532100B Features

* 262,144 words × 8 bit organization

* Access time: 150 ns (MAX.)

* Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)

* Static operation

* Mask-programmable OE/OE and OE1/OE1/DC

* TTL compatible I/O

* Three-state outputs

LH532100B_SharpElectrionicComponents.pdf

LH532100B Datasheet Preview — Preview of LH532100B PDF

Datasheet Details

Part number:

LH532100B

Manufacturer:

Sharp Electrionic Components

File Size:

79.17 KB

Description:

Cmos 2m (256k x 8) mrom.

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LH532100B LH532100B CMOS 256K MROM Sharp Electrionic Components

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