LH532100B-1 Datasheet - Sharp Electrionic Components

LH532100B-1 - CMOS 2M (256K x 8) MROM

The LH532100B-1 is a CMOS 2M-bit mask-programmable ROM organized as 262,144 × 8 bits.

It is fabricated using silicon-gate process technology.

D7 CE A10 OE/OE A11 A9 A8 A13 A14 21 22 23 24 25 26 27 28 29 32-PIN DIP 32-PIN SOP OE1/OE1/DC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 GND CMOS 2M (256K

LH532100B-1 Features

* 262,144 words × 8 bit organization

* Access time: 120 ns (MAX.)

* Static operation

* TTL compatible I/O

* Three-state outputs

* Single +5 V power supply

* Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)

* Mask-progr

LH532100B-1_SharpElectrionicComponents.pdf

LH532100B-1 Datasheet Preview — Preview of LH532100B-1 PDF

Datasheet Details

Part number:

LH532100B-1

Manufacturer:

Sharp Electrionic Components

File Size:

79.17 KB

Description:

Cmos 2m (256k x 8) mrom.

📁 Related Datasheet

LH532100B LH532000B LH532000B-1 LH532048 LH5324000 LH5324500

📌 All Tags

LH532100B-1 CMOS 256K MROM Sharp Electrionic Components