LH534700
Sharp
310.05kb
Cmos 4m mask-programmable rom.
TAGS
📁 Related Datasheet
LH534A00 - CMOS 4M (512K x 8) MROM
(Sharp Electrionic Components)
LH534A00
FEATURES • 524,288 words × 8 bit organization • Access time: 120 ns (MAX.) • Static operation • TTL patible I/O • Three-state outputs • Si.
LH534B00 - CMOS 4M (512K x 8) MROM
(Sharp Electrionic Components)
LH534B00
FEATURES • 524,288 words × 8 bit organization • Access time: 120 ns (MAX.) • Power consumption: Operating: 330 mW (MAX.) Standby: 550 µW (MAX.
LH530800A - CMOS 1M (128K x 8) MROM
(Sharp Electrionic Components)
LH530800A
FEATURES • 131,072 words × 8 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 192.5 mW (MAX.) Standby: 550 µW (.
LH530800A-Y - CMOS 1M (128K x 8) 3 V-Drive MROM
(Sharp Electrionic Components)
LH530800A-Y
FEATURES • 131,072 words × 8 bit organization • Access times: 500 ns (MAX.) at 2.6 V ≤ VCC < 4.5 V 150 ns (MAX.) at 4.5 V ≤ VCC ≤ 5.5 V • .
LH531000B - CMOS 1M (128K x 8) MROM
(Sharp Electrionic Components)
LH531000B
FEATURES • 131,072 words × 8 bit organization • Access time: 150 ns (MAX.) • Low power consumption: Operating: 192.5 mW (MAX.) Standby: 550 .
LH531000B-S - CMOS 1M (128K x 8) 3 V-Drive MROM
(Sharp Electrionic Components)
LH531000B-S
FEATURES • 131,072 words × 8 bit organization • Access time: 500 ns (MAX.) • Power consumption: Operating: 64.8 mW (MAX.) Standby: 108 µW .
LH531024 - CMOS 1M (64K x 16) MROM
(Sharp Electrionic Components)
LH531024
FEATURES • 65,536 words × 16 bit organization • Access time: 100 ns (MAX.) • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 µW (M.
LH5316P00B - CMOS 16M (2M x 8/1M x 16) MROM
(Sharp Electrionic Components)
LH5316P00B
FEATURES • 2,097,152 × 8 bit organization (Byte mode: BYTE = VIL) 1,048,576 × 16 bit organization (Word mode: BYTE = VIH) • Access time: 12.
LH531V00 - CMOS 1M (128K x 8) MROM
(Sharp Electrionic Components)
LH531V00
FEATURES • 131,072 words × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.
LH532000B - CMOS 2M (256K x 8/128K x 16) MROM
(Sharp Electrionic Components)
LH532000B
FEATURES • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • BYTE input pin selects bit confi.