LH534A00 Datasheet, Mrom, Sharp Electrionic Components

LH534A00 Features

• Mrom
• 524,288 words × 8 bit organization
• Access time: 120 ns (MAX.)
• Static operation
• TTL compatible I/O
• Three-state outputs
• Single

PDF File Details

Part number:

LH534A00

Manufacturer:

Sharp Electrionic Components

File Size:

40.09kb

Download:

📄 Datasheet

Description:

Cmos 4m (512k x 8) mrom. The LH534A00 is a 4M-bit mask-programmable ROM organized as 524,288 × 8 bits. It is fabricated using silicon-gate CMOS process techno

TAGS

LH534A00

Sharp Electrionic Components

📁 Related Datasheet

LH534700 - CMOS 4M Mask-Programmable ROM (Sharp)
w w w .D t a S a e h U 4 t e m o .c w w w .D at a e h S 4 et U o .c m .

LH534B00 - CMOS 4M (512K x 8) MROM (Sharp Electrionic Components)
LH534B00 FEATURES • 524,288 words × 8 bit organization • Access time: 120 ns (MAX.) • Power consumption: Operating: 330 mW (MAX.) Standby: 550 µW (MAX.

LH530800A - CMOS 1M (128K x 8) MROM (Sharp Electrionic Components)
LH530800A FEATURES • 131,072 words × 8 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 192.5 mW (MAX.) Standby: 550 µW (.

LH530800A-Y - CMOS 1M (128K x 8) 3 V-Drive MROM (Sharp Electrionic Components)
LH530800A-Y FEATURES • 131,072 words × 8 bit organization • Access times: 500 ns (MAX.) at 2.6 V ≤ VCC < 4.5 V 150 ns (MAX.) at 4.5 V ≤ VCC ≤ 5.5 V • .

LH531000B - CMOS 1M (128K x 8) MROM (Sharp Electrionic Components)
LH531000B FEATURES • 131,072 words × 8 bit organization • Access time: 150 ns (MAX.) • Low power consumption: Operating: 192.5 mW (MAX.) Standby: 550 .

LH531000B-S - CMOS 1M (128K x 8) 3 V-Drive MROM (Sharp Electrionic Components)
LH531000B-S FEATURES • 131,072 words × 8 bit organization • Access time: 500 ns (MAX.) • Power consumption: Operating: 64.8 mW (MAX.) Standby: 108 µW .

LH531024 - CMOS 1M (64K x 16) MROM (Sharp Electrionic Components)
LH531024 FEATURES • 65,536 words × 16 bit organization • Access time: 100 ns (MAX.) • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 µW (M.

LH5316P00B - CMOS 16M (2M x 8/1M x 16) MROM (Sharp Electrionic Components)
LH5316P00B FEATURES • 2,097,152 × 8 bit organization (Byte mode: BYTE = VIL) 1,048,576 × 16 bit organization (Word mode: BYTE = VIH) • Access time: 12.

LH531V00 - CMOS 1M (128K x 8) MROM (Sharp Electrionic Components)
LH531V00 FEATURES • 131,072 words × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.

LH532000B - CMOS 2M (256K x 8/128K x 16) MROM (Sharp Electrionic Components)
LH532000B FEATURES • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • BYTE input pin selects bit confi.