LH530800A-Y Datasheet PDF - Sharp Electrionic Components CMOS 1M (128K x 8) 3 V-Drive MROM Specs

LH530800A-Y - CMOS 1M (128K x 8) 3 V-Drive MROM

Datasheet Summary

Description

The LH530800A-Y is a 1M-bit mask-programmable ROM organized as 131,072 × 8 bits.

It is fabricated using silicon-gate CMOS process technology.

Features

131,072 words × 8 bit organization.
Access times: 500 ns (MAX. ) at 2.6 V ≤ VCC < 4.5 V 150 ns (MAX. ) at 4.5 V ≤ VCC ≤ 5.5 V.
Low-power consumption: Operating: 193 mW (MAX. ) Standby: 550 µW (MAX. ).
Static operation.
Three-state outputs.
Mask-programmable control pin: Pin 24 = OE/OE.
Wide range power supply: 2.6 V to 5.5 V.
Packages: 32-pin, 600-mil DIP 32-pin, 525-mil SOP.

Datasheet Details

Part number	LH530800A-Y
Manufacturer	Sharp Electrionic Components
File Size	52.93 KB
Description	CMOS 1M (128K x 8) 3 V-Drive MROM
Datasheet	LH530800A-Y Datasheet
Additional preview pages of the LH530800A-Y datasheet.

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Full PDF Text Transcription

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LH530800A-Y FEATURES • 131,072 words × 8 bit organization • Access times: 500 ns (MAX.) at 2.6 V ≤ VCC < 4.5 V 150 ns (MAX.) at 4.5 V ≤ VCC ≤ 5.5 V • Low-power consumption: Operating: 193 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • Three-state outputs • Mask-programmable control pin: Pin 24 = OE/OE • Wide range power supply: 2.6 V to 5.5 V • Packages: 32-pin, 600-mil DIP 32-pin, 525-mil SOP DESCRIPTION The LH530800A-Y is a 1M-bit mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology.

Published: Mar 22, 2005 |