LH530800A-Y Datasheet - Sharp Electrionic Components

LH530800A-Y CMOS 1M (128K x 8) 3 V-Drive MROM

The LH530800A-Y is a 1M-bit mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. CMOS 1M (128K × 8) 3 V-Drive MROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 .

LH530800A-Y Features

* 131,072 words × 8 bit organization

* Access times: 500 ns (MAX.) at 2.6 V ≤ VCC < 4.5 V 150 ns (MAX.) at 4.5 V ≤ VCC ≤ 5.5 V

* Low-power consumption: Operating: 193 mW (MAX.) Standby: 550 µW (MAX.)

* Static operation

* Three-state outputs

* Mask-prog

LH530800A-Y_SharpElectrionicComponents.pdf