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LH531000B-S Datasheet

Manufacturer: Sharp Corporation
LH531000B-S datasheet preview

Datasheet Details

Part number LH531000B-S
Datasheet LH531000B-S_SharpElectrionicComponents.pdf
File Size 39.73 KB
Manufacturer Sharp Corporation
Description CMOS 1M (128K x 8) 3 V-Drive MROM
LH531000B-S page 2 LH531000B-S page 3

LH531000B-S Overview

The LH531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. LH531000B-S Block Diagram PIN DESCRIPTION SIGNAL PIN NAME NOTE SIGNAL PIN NAME NOTE A0 A16 D0 D7 CE/OE/OE Address input Data output Chip Enable input or Output Enable input VCC GND 1 Power supply (2.6 V to 3.6 V) Ground NOTE:.

LH531000B-S Key Features

  • 131,072 words × 8 bit organization
  • Access time: 500 ns (MAX.)
  • Power consumption: Operating: 64.8 mW (MAX.) Standby: 108 µW (MAX.)
  • Mask-programmable control pin: Pin 20 = CE/OE/OE
  • Static operation
  • Three-state outputs
  • Low power supply: 2.6 V to 3.6 V
  • Package: 28-pin, 450-mil SOP
  • A16 D0
  • D7 CE/OE/OE
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