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LH531000B-S - CMOS 1M (128K x 8) 3 V-Drive MROM

General Description

The LH531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits.

It is fabricated using silicon-gate CMOS process technology.

Key Features

  • 131,072 words × 8 bit organization.
  • Access time: 500 ns (MAX. ).
  • Power consumption: Operating: 64.8 mW (MAX. ) Standby: 108 µW (MAX. ).
  • Mask-programmable control pin: Pin 20 = CE/OE/OE.
  • Static operation.
  • Three-state outputs.
  • Low power supply: 2.6 V to 3.6 V.
  • Package: 28-pin, 450-mil SOP CMOS 1M (128K × 8) 3 V-Drive MROM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LH531000B-S FEATURES • 131,072 words × 8 bit organization • Access time: 500 ns (MAX.) • Power consumption: Operating: 64.8 mW (MAX.) Standby: 108 µW (MAX.) • Mask-programmable control pin: Pin 20 = CE/OE/OE • Static operation • Three-state outputs • Low power supply: 2.6 V to 3.6 V • Package: 28-pin, 450-mil SOP CMOS 1M (128K × 8) 3 V-Drive MROM DESCRIPTION The LH531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. PIN CONNECTIONS 28-PIN SOP TOP VIEW A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A14 A13 A8 A9 A11 A16 A10 CE/OE/OE D7 D6 D5 D4 D3 531000BS-1 Figure 1.