Datasheet4U Logo Datasheet4U.com

LH531000B - CMOS 1M (128K x 8) MROM

Datasheet Summary

Description

The LH531000B is a mask-programmable ROM organized as 131,072 × 8 bits.

It is fabricated using silicon-gate CMOS process technology.

Features

  • 131,072 words × 8 bit organization.
  • Access time: 150 ns (MAX. ).
  • Low power consumption: Operating: 192.5 mW (MAX. ) Standby: 550 µW (MAX. ).
  • Programmable CE/OE/OE.
  • Static operation.
  • TTL compatible I/O.
  • Three-state outputs.
  • Single +5 V power supply.
  • Packages: 28-pin, 600-mil DIP 28-pin, 450-mil SOP.
  • Mask ROM specific pinout CMOS 1M (128K × 8) MROM.

📥 Download Datasheet

Datasheet preview – LH531000B

Datasheet Details

Part number LH531000B
Manufacturer Sharp Electrionic Components
File Size 51.29 KB
Description CMOS 1M (128K x 8) MROM
Datasheet download datasheet LH531000B Datasheet
Additional preview pages of the LH531000B datasheet.

📁 Similar Datasheet

Other Datasheets by Sharp Electrionic Components

Full PDF Text Transcription

Click to expand full text
LH531000B FEATURES • 131,072 words × 8 bit organization • Access time: 150 ns (MAX.) • Low power consumption: Operating: 192.5 mW (MAX.) Standby: 550 µW (MAX.) • Programmable CE/OE/OE • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Packages: 28-pin, 600-mil DIP 28-pin, 450-mil SOP • Mask ROM specific pinout CMOS 1M (128K × 8) MROM DESCRIPTION The LH531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. PIN CONNECTIONS 28-PIN DIP 28-PIN SOP TOP VIEW A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A14 A13 A8 A9 A11 A16 A10 CE /OE/OE D7 D6 D5 D4 D3 531000B-1 Figure 1.
Published: |