LH531000B Datasheet, Mrom, Sharp Electrionic Components

LH531000B Features

• Mrom
• 131,072 words × 8 bit organization
• Access time: 150 ns (MAX.)
• Low power consumption: Operating: 192.5 mW (MAX.) Standby: 550 µW (MAX.)
• Programmab

PDF File Details

Part number:

LH531000B

Manufacturer:

Sharp Electrionic Components

File Size:

51.29kb

Download:

📄 Datasheet

Description:

Cmos 1m (128k x 8) mrom. The LH531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology.

TAGS

LH531000B

Sharp Electrionic Components

📁 Related Datasheet

LH531000B-S - CMOS 1M (128K x 8) 3 V-Drive MROM (Sharp Electrionic Components)
LH531000B-S FEATURES • 131,072 words × 8 bit organization • Access time: 500 ns (MAX.) • Power consumption: Operating: 64.8 mW (MAX.) Standby: 108 µW .

LH531024 - CMOS 1M (64K x 16) MROM (Sharp Electrionic Components)
LH531024 FEATURES • 65,536 words × 16 bit organization • Access time: 100 ns (MAX.) • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 µW (M.

LH5316P00B - CMOS 16M (2M x 8/1M x 16) MROM (Sharp Electrionic Components)
LH5316P00B FEATURES • 2,097,152 × 8 bit organization (Byte mode: BYTE = VIL) 1,048,576 × 16 bit organization (Word mode: BYTE = VIH) • Access time: 12.

LH531V00 - CMOS 1M (128K x 8) MROM (Sharp Electrionic Components)
LH531V00 FEATURES • 131,072 words × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.

LH530800A - CMOS 1M (128K x 8) MROM (Sharp Electrionic Components)
LH530800A FEATURES • 131,072 words × 8 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 192.5 mW (MAX.) Standby: 550 µW (.

LH530800A-Y - CMOS 1M (128K x 8) 3 V-Drive MROM (Sharp Electrionic Components)
LH530800A-Y FEATURES • 131,072 words × 8 bit organization • Access times: 500 ns (MAX.) at 2.6 V ≤ VCC < 4.5 V 150 ns (MAX.) at 4.5 V ≤ VCC ≤ 5.5 V • .

LH532000B - CMOS 2M (256K x 8/128K x 16) MROM (Sharp Electrionic Components)
LH532000B FEATURES • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • BYTE input pin selects bit confi.

LH532000B-1 - CMOS 2M (256K x 8/128K x 16) MROM (Sharp Electrionic Components)
LH532000B-1 FEATURES • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • P.

LH532048 - CMOS 2M (128K x 16) MROM (Sharp Electrionic Components)
LH532048 FEATURES • 131,072 words × 16 bit organization • Access time: 100 ns (MAX.) • Static operation • TTL patible I/O • Three-state outputs • S.

LH532100B - CMOS 2M (256K x 8) MROM (Sharp Electrionic Components)
LH532100B FEATURES • 262,144 words × 8 bit organization • Access time: 150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 µW.