LH531000B-S Datasheet (Sharp Electrionic Components) - CMOS 1M (128K x 8) 3 V-Drive MROM

LH531000B-S, CMOS 1M (128K x 8) 3 V-Drive MROM

The LH531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits.

It is fabricated using silicon-gate CMOS process technology.

PIN CONNECTIONS 28-PIN SOP TOP VIEW A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC

LH531000B-S Features

* 131,072 words × 8 bit organization

* Access time: 500 ns (MAX.)

* Power consumption: Operating: 64.8 mW (MAX.) Standby: 108 µW (MAX.)

* Mask-programmable control pin: Pin 20 = CE/OE/OE

* Static operation

* Three-state outputs

* Low power supp