GA103T8R1MZ Datasheet, Detector, Sharp Microelectronics

GA103T8R1MZ Features

• Detector ( 1 ) OPIC light detector with built-in RF amplifier (Integrates 8-division PIN photodiode and Amp. IC onto a single chip) CD-R : 60× speed writing CD-ROM : 60× speed reading DVD-ROM: 1

PDF File Details

Part number:

GA103T8R1MZ

Manufacturer:

Sharp Microelectronics

File Size:

80.61kb

Download:

📄 Datasheet

Description:

Opic light detector.

GA103T8R1MZ Application

• Applications ( 1 ) CD-R/RW drives ( 2 ) DVD-R/RW drives ( 3 ) DVD+R/RW drives GND 8 VRRF 9 NC VS VF1 10 VB VF2 11 VC 12 VE1 VD 13 VE2 VA VWRF 14 VC

TAGS

GA103T8R1MZ

Sharp Microelectronics

📁 Related Datasheet

GA100 - SCRs (Microsemi)
.

GA100K6A1A - THERMISTORS (TE)
SERIES I THERMISTORS Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.

GA100K6A1B - THERMISTORS (TE)
SERIES I THERMISTORS Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.

GA100K6A1C - THERMISTORS (TE)
SERIES I THERMISTORS Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.

GA100K6A1D - THERMISTORS (TE)
SERIES I THERMISTORS Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.

GA100NA60U - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
.DataSheet.co.kr PD - 94290 GA100NA60U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFastTM: Optimized for minimum saturation voltage and ope.

GA100NA60UP - Insulated Gate Bipolar Transistor (Vishay Siliconix)
.DataSheet.co.kr GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A FEATURES • Ultrafast: Optimized f.

GA100SICP12-227 - Silicon Carbide Junction Transistor/Schottky Diode Co-pack (GeneSiC)
GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Swit.

GA100TS120U - HALF-BRIDGE IGBT INT-A-PAK (International Rectifier)
PD - 50060B GA100TS120U HALF-BRIDGE IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-.

GA100TS120UPBF - IGBT (Vishay Siliconix)
.DataSheet.co.kr GA100TS120UPbF Vishay High Power Products Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 100 A FEATURES • Generation 4 IGB.