* Current consumption is reduced with use of the burst mode, promoting standby compatibility with a single converter. The optimized switching device provides ideal partial resonance operation for high efficiency and low noise. The 900V resistant switching device (high-speed IGBT) simplifies design of
MR2940
Shindengen
215.70 KB
(mr2000 series) partial resonance power supply ic.
Vol.02-06-e / June2002
MR2000 Series
Standby Compatible Partial Resonance Power Supply IC Module with High-speed IGBT
Shigeru Hisada - Electronic Dev.
📁 Related Datasheet
MR2920 - (MR2900 Series) Input Voltage Autosensing / Partial Resonance Power Supply IC Module
(Shindengen)
Input voltage autosensing Provision for Standby mode operation Partial Resonance Power Supply IC Module
MR2900 Series
2002/03/01
Tentative
Applica.
MR2920 - (MR2900 Series) Standby Compatible Partial Resonance Power Supply IC Module
(Password)
.
MR2920 - (MR2000 Series) Partial Resonance Power Supply IC
(Shindengen)
Vol.02-06-e / June2002
MR2000 Series
Standby Compatible Partial Resonance Power Supply IC Module with High-speed IGBT
Shigeru Hisada - Electronic Dev.
MR2000 - MEDIUM CURRENT SILICON RECTIFIERS
(Digitron Semiconductors)
MR2000 SERIES
High-reliability discrete products and engineering services since 1977
MEDIUM CURRENT SILICON RECTIFIERS
FEATURES Available as “HR”.
MR2000 - Air Filter Regulator
(MOTOYAMA)
.
MR2001 - MEDIUM CURRENT SILICON RECTIFIERS
(Digitron Semiconductors)
MR2000 SERIES
High-reliability discrete products and engineering services since 1977
MEDIUM CURRENT SILICON RECTIFIERS
FEATURES Available as “HR”.
MR2002 - MEDIUM CURRENT SILICON RECTIFIERS
(Digitron Semiconductors)
MR2000 SERIES
High-reliability discrete products and engineering services since 1977
MEDIUM CURRENT SILICON RECTIFIERS
FEATURES Available as “HR”.
MR2002C - High Power RF LDMOS FET
(Innogration)
MR2002C LDMOS TRANSISTOR
Document Number: MR2002C Preliminary Datasheet V1.1
20W, 28V High Power RF LDMOS FETs
Description
The MR2002C is a 20-watt.
