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MR2002C - High Power RF LDMOS FET

MR2002C Description

MR2002C LDMOS TRANSISTOR Document Number: MR2002C Preliminary Datasheet V1.1 20W, 28V High Power RF LDMOS FETs .
The MR2002C is a 20-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz.

MR2002C Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

MR2002C Applications

* with frequencies under 2000 MHz. It can be used MR2002C in Class AB/B and Class C for all typical modulation formats. It can also operate at lower voltage down to 12V with decreased power capability.
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ =

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Datasheet Details

Part number
MR2002C
Manufacturer
Innogration
File Size
280.57 KB
Datasheet
MR2002C-Innogration.pdf
Description
High Power RF LDMOS FET

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High Power LDMOS FET Innogration
Innogration MR2002C-like datasheet