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MR2002C

High Power RF LDMOS FET

MR2002C Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Excellent thermal stability, low HCI drift

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Pb-free, RoHS-compliant Suitable Application

MR2002C General Description

The MR2002C is a 20-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz. It can be used MR2002C in Class AB/B and Class C for all typical modulation formats. It can also operate at lower voltage down to 12V with decreased power capabili.

MR2002C Datasheet (280.57 KB)

Preview of MR2002C PDF

Datasheet Details

Part number:

MR2002C

Manufacturer:

Innogration

File Size:

280.57 KB

Description:

High power rf ldmos fet.

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MR2002C High Power LDMOS FET Innogration

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