MR2002C Datasheet - Innogration

High Power RF LDMOS FET

MR2002C Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Excellent thermal stability, low HCI drift

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Pb-free, RoHS-compliant Suitable Application

MR2002C General Description

The MR2002C is a 20-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz. It can be used MR2002C in Class AB/B and Class C for all typical modulation formats. It can also operate at lower voltage down to 12V with decreased power capabili.

MR2002C Datasheet (280.57 KB)

MR2002C Datasheet Preview — Preview of MR2002C PDF

Datasheet Details

Part number:

MR2002C

Manufacturer:

Innogration

File Size:

280.57 KB

Description:

High power rf ldmos fet.

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MR2002C High Power LDMOS FET Innogration

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MR2002C Features

MR2002C General Description

Datasheet Details

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