MR2002C High Power RF LDMOS FET

Innogration

Description

MR2002C LDMOS TRANSISTOR Document Number: MR2002C Preliminary Datasheet V1.1 20W, 28V High Power RF LDMOS FETs .
The MR2002C is a 20-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz.

📥 Download Datasheet

MR2002C Datasheet Preview — Preview of MR2002C PDF

Datasheet Specifications

Part number: MR2002C
Manufacturer: Innogration
File Size: 280.57 KB
Datasheet: MR2002C-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

Applications

* with frequencies under 2000 MHz. It can be used MR2002C in Class AB/B and Class C for all typical modulation formats. It can also operate at lower voltage down to 12V with decreased power capability.
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ =

MR2002C Distributors

📁 Related Datasheet

MR2002 MR2000 MR2001 MR2004 MR2006 MR2008

📌 All Tags

MR2002C High Power LDMOS FET Innogration

Innogration MR2002C-like datasheet

MR2003C

MR2006C