MR2006C High Power RF LDMOS FET

Innogration

Description

MR2006C LDMOS TRANSISTOR Document Number: MR2006C Objective Datasheet V1.1 60W, 28V High Power RF LDMOS FETs .
The MR2006C is a 60-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz.

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Datasheet Specifications

Part number: MR2006C
Manufacturer: Innogration
File Size: 280.59 KB
Datasheet: MR2006C-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

Applications

* with frequencies under 2000 MHz. It can be used MR2006C in Class AB/B and Class C for all typical modulation formats. It can also operate at lower voltage down to 12V with decreased power capability.
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ =

MR2006C Distributors

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