Datasheet4U Logo Datasheet4U.com
1 views

MR2006C Datasheet - Innogration

High Power RF LDMOS FET

MR2006C Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Excellent thermal stability, low HCI drift

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Pb-free, RoHS-compliant Suitable Applications

MR2006C General Description

The MR2006C is a 60-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz. It can be used MR2006C in Class AB/B and Class C for all typical modulation formats. It can also operate at lower voltage down to 12V with decreased power capabili.

MR2006C Datasheet (280.59 KB)

Preview of MR2006C PDF

Datasheet Details

Part number:

MR2006C

Manufacturer:

Innogration

File Size:

280.59 KB

Description:

High power rf ldmos fet.

📁 Related Datasheet

MR2006 MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)

MR2000 MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)

MR2000 Air Filter Regulator (MOTOYAMA)

MR2001 MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)

MR2002 MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)

MR2002C High Power RF LDMOS FET (Innogration)

MR2003C High Power RF LDMOS FET (Innogration)

MR2004 MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)

MR2008 MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)

MR2010 MEDIUM CURRENT SILICON RECTIFIERS (Digitron Semiconductors)

TAGS

MR2006C High Power LDMOS FET Innogration

Image Gallery

MR2006C Datasheet Preview Page 2 MR2006C Datasheet Preview Page 3

MR2006C Distributor