Datasheet Details
- Part number
- MR2003C
- Manufacturer
- Innogration
- File Size
- 280.48 KB
- Datasheet
- MR2003C-Innogration.pdf
- Description
- High Power RF LDMOS FET
MR2003C Description
MR2003C LDMOS TRANSISTOR Document Number: MR2003C Preliminary Datasheet V1.1 30W, 28V High Power RF LDMOS FETs .
The MR2003C is a 30-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz.
MR2003C Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Pb-free, RoHS-compliant
Suitable Applicatio
MR2003C Applications
* with frequencies under 2000 MHz. It can be used
MR2003C
in Class AB/B and Class C for all typical modulation formats. It can also operate at lower voltage down to 12V with decrease power capability.
* Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 2
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