Description
A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423MB is designed for class 1 Bluetoothtm 2.4 GHz radio applications.
making it capable of overcoming insertion losses of up to 2.7 dB between amplifier output and antenna tm input in class 1 Bluetooth applications.
Features
- an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation. An on-chip ramping circuit provides the turnon/off switching of amplifier output with less than 3dB overshoot, meeting the Bluetoothtm specification 1.1. The PA2423MB operates at 3.3V DC. At typical output power level (+22.7 dBm), its current consumption is 125 mA. Shipping Method Tape and reel Tubes -samples The silicon/silicon-germanium.
PA2423_SiGeSemiconductorInc..pdf
