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BCR 108S
NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in on package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ)
Type BCR 108S
Marking Ordering Code Pin Configuration WHs
Package
Q62702-C2414 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115°C Junction temperature Storage temperature Symbol Values 50 50 5 10 100 250 150 - 65 ... + 150 mA mW °C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Thermal Resistance Junction ambient
1)
RthJA RthJS
≤ 275 ≤ 140
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.
BCR108S Datasheet
