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BCR112W Datasheet - Siemens Semiconductor Group

BCR112W NPN Silicon Digital Transistor (Switching circuit/ inverter/ inferface circuit/ driver circuit)

BCR 112W NPN Silicon Digital Transistor Switching circuit, inverter, inferface circuit, driver circuit Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) Type BCR 112W Marking Ordering Code WFs Q62702-C2284 Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 124°C Junction temperature Storage temperature Symbol Values 50 5.

BCR112W_SiemensSemiconductorGroup.pdf

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Datasheet Details

Part number:

BCR112W

Manufacturer:

Siemens Semiconductor Group

File Size:

34.91 KB

Description:

Npn silicon digital transistor (switching circuit/ inverter/ inferface circuit/ driver circuit).

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BCR112W BCR112W NPN Silicon Digital Transistor Switching circuit inverter inferface circuit driver circuit Siemens Semiconductor Group

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