BCR166W Datasheet (Siemens Semiconductor Group) - PNP Silicon Digital Transistor

BCR166W, PNP Silicon Digital Transistor

BCR 166W PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7kΩ, R2=47kΩ) Type BCR 166W Marking Ordering Code WTs UPON INQUIRY Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 124°C Junction temperature Storage temperature Symbol Values 50 50