BCX41- NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage)
BCX42- PNP Silicon AF and Switching Transistors (For general AF applications High breakdown voltage)
BCX58- NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
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NPN Silicon AF Switching Transistor
For general AF applications q High breakdown voltage q Low collector-emitter saturation voltage q Complementary type: BCX 13 (PNP)
q 2
BCX 12
3 1
Type BCX 12
Marking BCX 12
Ordering Code Q62702-C25
Pin Configuration 1 2 3 C B E
Package1) TO-92
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC
≤ ≤
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values 125 125 5 800 1 100 200 625 150 – 65 … + 150
Unit V
mA A mA mW ˚C
200 135
K/W
1) 2)
For detailed information see chapter Pa
BCX12 Datasheet
