BUZ92
Siemens Semiconductor Group
176.13kb
Power transistor.
TAGS
📁 Related Datasheet
BUZ90 - Power Transistor
(Siemens Semiconductor Group)
BUZ 90
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 90
VDS
600 V
ID
4.5 A
RDS(.
BUZ90 - N-Channel MOSFET
(INCHANGE)
isc N-Channel Mosfet Transistor
BUZ90
·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot v.
BUZ900 - (BUZ900 / BUZ901) N-CHANNEL POWER MOSFET
(Magna)
MAGNA
..
TEC
25.0
+0.1 -0.15
BUZ900 BUZ901
MECHANICAL DATA Dimensions in mm
N–CHANNEL POWER MOSFET
8.7 Max. 1.50 Typ. 11.60 ± 0.3.
BUZ900DP - (BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET
(ETC)
MAGNA
TEC
20.0 5.0
BUZ900DP BUZ901DP
MECHANICAL DATA Dimensions in mm
3.3 Dia.
N–CHANNEL POWER MOSFET
POWER MOSFETS FOR AUDIO APPLICATIONS
FEATU.
BUZ900P - N-CHANNEL POWER MOSFET
(Magna)
MAGNA
TEC
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845)
BUZ900P BUZ90.
BUZ900X4S - N-Channel Power MOSFET
(ETC)
MAGNA
TEC
3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .
BUZ901 - (BUZ900 / BUZ901) N-CHANNEL POWER MOSFET
(Magna)
MAGNA
..
TEC
25.0
+0.1 -0.15
BUZ900 BUZ901
MECHANICAL DATA Dimensions in mm
N–CHANNEL POWER MOSFET
8.7 Max. 1.50 Typ. 11.60 ± 0.3.
BUZ901D - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current: ID= 16A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·100% avalanche tested ·Minimum Lot.
BUZ901DP - (BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET
(ETC)
MAGNA
TEC
20.0 5.0
BUZ900DP BUZ901DP
MECHANICAL DATA Dimensions in mm
3.3 Dia.
N–CHANNEL POWER MOSFET
POWER MOSFETS FOR AUDIO APPLICATIONS
FEATU.
BUZ901P - N-CHANNEL POWER MOSFET
(Magna)
MAGNA
TEC
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845)
BUZ900P BUZ90.
