BUZ901D Datasheet, Mosfet, INCHANGE

BUZ901D Features

• Mosfet
• Drain Current: ID= 16A@ TC=25℃
• Drain Source Voltage- : VDSS= 200V(Min)
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performa

PDF File Details

Part number:

BUZ901D

Manufacturer:

INCHANGE

File Size:

228.04kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

BUZ901D Application

• Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Curre

TAGS

BUZ901D

INCHANGE

📁 Related Datasheet

BUZ901 - (BUZ900 / BUZ901) N-CHANNEL POWER MOSFET (Magna)
MAGNA .. TEC 25.0 +0.1 -0.15 BUZ900 BUZ901 MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET 8.7 Max. 1.50 Typ. 11.60 ± 0.3.

BUZ901DP - (BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET (ETC)
MAGNA TEC 20.0 5.0 BUZ900DP BUZ901DP MECHANICAL DATA Dimensions in mm 3.3 Dia. N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATU.

BUZ901P - N-CHANNEL POWER MOSFET (Magna)
MAGNA TEC 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) BUZ900P BUZ90.

BUZ901X4S - N-Channel Power MOSFET (ETC)
MAGNA TEC 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .

BUZ90 - Power Transistor (Siemens Semiconductor Group)
BUZ 90 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 90 VDS 600 V ID 4.5 A RDS(.

BUZ90 - N-Channel MOSFET (INCHANGE)
isc N-Channel Mosfet Transistor BUZ90 ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot v.

BUZ900 - (BUZ900 / BUZ901) N-CHANNEL POWER MOSFET (Magna)
MAGNA .. TEC 25.0 +0.1 -0.15 BUZ900 BUZ901 MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET 8.7 Max. 1.50 Typ. 11.60 ± 0.3.

BUZ900DP - (BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET (ETC)
MAGNA TEC 20.0 5.0 BUZ900DP BUZ901DP MECHANICAL DATA Dimensions in mm 3.3 Dia. N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATU.

BUZ900P - N-CHANNEL POWER MOSFET (Magna)
MAGNA TEC 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) BUZ900P BUZ90.

BUZ900X4S - N-Channel Power MOSFET (ETC)
MAGNA TEC 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .