Q62607-S60 Datasheet, Cell, Siemens Semiconductor Group

Q62607-S60 Features

• Cell q Especially suitable for applications from 400 nm to 1120 nm q Cathode = back contact q Mounting by bolt/nut Applications q For control and drive circuits q Light pulse scanning q Quan

PDF File Details

Part number:

Q62607-S60

Manufacturer:

Siemens Semiconductor Group

File Size:

162.80kb

Download:

📄 Datasheet

Description:

Silizium-fotoelement silicon photovoltaic cell. Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Symbol Symbol Wert Value &nbs

Q62607-S60 Application

• Applications from 400 nm to 1120 nm q Cathode = back contact q Mounting by bolt/nut Applications q For control and drive circuits q Light pulse scan

TAGS

Q62607-S60

Siemens Semiconductor Group

📁 Related Datasheet

Q62607-S61 - Silizium-Fotoelement Silicon Photovoltaic Cell (Siemens Semiconductor Group)
TP 61 P Silizium-Fotoelement Silicon Photovoltaic Cell TP 61 P Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Q627002G0078 - GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones) (Siemens Semiconductor Group)
CGY 81 GaAs MMIC l l l l l Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones 31 dBm saturated output power @ PAE=55% typ. 29 dB.

Q62701-F51 - PNP GERMANIUM RF TRANSISTOR (Siemens Semiconductor Group)
.

Q62701-F72 - PNP GERMANIUM RF TRANSISTOR (Siemens Semiconductor Group)
.

Q62701-F88 - PNP GERMANIUM RHF TRANSISTOR (Siemens Semiconductor Group)
.

Q62701-F92 - PNP GERMANIUM UHF TRANSISTOR (Siemens Semiconductor Group)
.

Q62702-A0042 - Silicon Crossover Ring Quad Schottky Diode (Siemens Semiconductor Group)
Silicon Crossover Ring Quad Schottky Diode q BAT 14-099R Medium barrier diode for double balanced mixers, phase detectors and modulators ESD: Elect.

Q62702-A0043 - Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators) (Siemens Semiconductor Group)
Silicon Crossover Ring Quad Schottky Diode q BAT 15-099R Low barrier diode for double balanced mixers, phase detectors and modulators ESD: Electros.

Q62702-A0062 - Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) (Siemens Semiconductor Group)
Silicon Schottky Diode Preliminary Data DBS mixer application to 10 GHz Low noise figure q Low barrier type q q BAT 15-098 ESD: Electrostatic discha.

Q62702-A0960 - Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) (Siemens Semiconductor Group)
Silicon Schottky Diode Preliminary Data DBS mixer application to 12 GHz q Low noise figure q Medium barrier type q BAT 14-098 ESD: Electrostatic dis.