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Q62702-B631 - Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)

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BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type BBY 51 Marking Ordering Code S3 Q62702-B631 Pin Configuration 1=A 2=A Package 3 = C1/C2 SOT-23 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 7 20 - 55 ... + 150 - 55 ... + 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Jan-09-1997 BBY 51 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 10 200 nA VR = 6 V, TA = 25 °C VR = 6 V, TA = 65 °C AC Characteristics Diode capacitance CT 4.5 3.4 2.7 2.5 5.3 4.2 3.5 3.1 1.75 1.78 0.5 0.37 0.
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