Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaβstrom Forward current Stoβstrom, τ = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Symbol Symbol Wert Value * 55 + 100 100 5
GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package 3.0 2.6 2.3 2.1 2.1 1.7 0.1 (typ) 0.9 0.7 SFH 421 SFH 426 fpl06724 3.4 3.0 2.4 0.8 0.6 Cathode/Collector marking Approx.
weight 0.03 g 1.1 0.5 0.18 0.6 0.12 0.4 Cathode/Collector GPL06724 3.7 3.3 SFH 421 TOPLED® (2.4) 2.8 2.4 4.2 3.8 0.7 Cathode/ Collector 2.54 spacing 1.1 0.9 Anode/ Emitter (2.85) GPL06880 Collector/Cathode marking (2.9) SFH 426 SIDELED® 4.2 3.8 Maβe in mm, wenn nicht anders ange
SFH421 Features
* q Very highly efficient GaAIAs-LED q Good Linearity (Ie = f [IF]) at high currents q DC (with modulation) or pulsed operations are possible q High reliability q High pulse handling capability q Suitable for surface mounting (SMT) q Available on tape and reel q SFH 421 same package as SFH 320/420 SFH
SFH421_SiemensSemiconductorGroup.pdf
Datasheet Details
SFH421
Siemens Semiconductor Group
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Gaalas-ir-lumineszenzdiode in smt-gehause gaalas infrared emitter in smt package.
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