HYB39S64160AT, HYB39S64400 64M-Bit Synchronous DRAM

Siemens Semiconductor

Description

HYB39S64400/800/160AT(L) 64MBit Synchronous DRAM 64 MBit Synchronous DRAM * High Performance: -8 fCKmax.tCK3 tAC3 tCK2 tAC2 125 8 6 10 6 -8.
LVTTL-version: HYB 39S64400AT-8 HYB 39S64400AT-8B HYB 39S64400AT-10 HYB 39S64800AT-8 HYB 39S64800AT-8B HYB 39S64800AT-10 HYB 39S64160AT-8 HYB 39S6416.

📥 Download Datasheet

HYB39S64160AT Datasheet Preview — This datasheet PDF includes multiple part numbers: HYB39S64160AT, HYB39S64400. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HYB39S64160AT, HYB39S64400
Manufacturer: Siemens Semiconductor
File Size: 678.57 KB
Datasheet: HYB39S64400_SiemensSemiconductor.pdf
Description: 64M-Bit Synchronous DRAM
Note: This datasheet PDF includes multiple part numbers: HYB39S64160AT, HYB39S64400.
Please refer to the document for exact specifications by model.

Features

* Mode Register Set (MRS) No Operation (NOP) Device Deselect (INHBT) Auto Refresh (REFA) Self Refresh Entry (REFS-EN) Self Refresh Exit (REFS-E

Applications

* -8B version for PC100 3-2-3 applications
* Fully Synchronous to Positive Clock Edge 0 to 70 °C operating temperature Four Banks controlled by BA0 & BA1 Programmable CAS Latency: 2 & 3 Programmable Wrap Sequence: Sequential or Inte

HYB39S64160AT Distributors

📁 Related Datasheet

HYB39S64160BT HYB39S64160BTL HYB39S64400BT HYB39S64400BTL HYB39S64800BT HYB39S64800BTL

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HYB39S64400 64M-Bit Synchronous DRAM Siemens Semiconductor

Siemens Semiconductor HYB39S64160AT-like datasheet