HYB39S16160AT-10 Datasheet - Siemens Semiconductor

HYB39S16160AT-10 16 MBit Synchronous DRAM

VDD VSS VDDQ VSSQ NC Semiconductor Group 2 1998-10-01 HYB 39S16400/800/160AT-8/-10 www.DataSheet4U.com 16 MBit Synchronous DRAM VDD DQ0 VSSQ DQ1 VDDQ DQ2 VSSQ DQ3 VDDQ N.C. N.C. WE CAS RAS CS A11 A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 3.

www.DataSheet4U.com 16 MBit Synchronous DRAM (second generation) Advanced Information High Performance: CAS latency = 3 -8 125 8 7 -10 100 10 8 Units MHz ns ns HYB 39S16400/800/160AT-8/-10 Multiple Burst Read with Single Write Operation Automatic and Controlled Precharge Command Data Mask for Read/Write control (× 4, × 8) Dual Data Mask for byte control (× 16) Auto Refresh (CBR) and Self Refresh Suspend Mode and Power Down .

HYB39S16160AT-10 Features

* e Register For application flexibility, a CAS latency, a burst length, and a burst sequence can be progr

HYB39S16160AT-10_SiemensSemiconductor.pdf