Description
www.DataSheet4U.com 16 MBit Synchronous DRAM HYB 39S16400/800/160CT-8/-10 * High Performance: -8 -10 100 10 7 12 8 Units MHz ns ns ns ns .
Pin Names CLK CKE CS RAS CAS WE A0 - A10 A11 (BS) Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Address.
Features
* Bit Synchronous DRAM
Operation Definition All of SDRAM operations are defined by states of control signals CS, RAS,
Applications
* Fully Synchronous to Positive Clock Edge
* 0 to 70 °C operating temperature
* Dual Banks controlled by A11 ( Bank Select)
* Programmable CAS Latency: 2, 3
* Programmable Wrap Sequence: Sequential or Interleave
* Programmable Burst Length: 1, 2, 4, 8
