HYB39S16160AT-8 - 16 MBit Synchronous DRAM

This page provides the datasheet information for the HYB39S16160AT-8, a member of the HYB39S16160AT-10 16 MBit Synchronous DRAM family.

Description

VDD DQ0 VSSQ DQ1 VDDQ DQ2 VSSQ DQ3 VDDQ N.C.

N.C.

Features

e Register For.

Siemens Semiconductor

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Datasheet Details

Part number	HYB39S16160AT-8
Manufacturer	Siemens Semiconductor
File Size	185.73 KB
Description	16 MBit Synchronous DRAM
Datasheet	HYB39S16160AT-8 Datasheet
Additional preview pages of the HYB39S16160AT-8 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com 16 MBit Synchronous DRAM (second generation) Advanced Information • High Performance: CAS latency = 3 -8 125 8 7 -10 100 10 8 Units MHz ns ns HYB 39S16400/800/160AT-8/-10 • Multiple Burst Read with Single Write Operation • Automatic and Controlled Precharge Command • Data Mask for Read/Write control (× 4, × 8) • Dual Data Mask for byte control (× 16) • Auto Refresh (CBR) and Self Refresh • Suspend Mode and Power Down Mode • 4096 refresh cycles/64 ms • Random Column Address every CLK (1-N Rule) • Single 3.3 V ± 0.

Published: Apr 10, 2010 |