HYS64V2100G 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module

Siemens

Description

3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module 168 pin unbuffered DIMM Modules HYS64V2100G(C)U-10 HYS72V2100G(C)U-10 * 168 Pin.
PC66 2M x 64 SDRAM module PC66 2M x 72 SDRAM module PC66 2M x 64 SDRAM COB module PC66 2M x 72 SDRAM COB module Pin Names A0-A10 A11 (BS) DQ0 - DQ63.

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Datasheet Specifications

Part number: HYS64V2100G
Manufacturer: Siemens
File Size: 75.48 KB
Datasheet: HYS64V2100G_SiemensSemiconductorGroup.pdf
Description: 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module

Features

* d after power-up, then a Precharge All Banks command must be given followed by 8 Auto Refresh (CBR) cycles before the Mode Register Set Operation can begin. 4. AC timing tests have V il = 0.4 V and V ih = 2.4 V with the timing referenced to the 1.4 V crossover point. The transition time is measured

Applications

* 1 bank 2M x 64, 2M x 72 organisation Optimized for byte-write non-parity or ECC applications Fully PC66 layout compatible JEDEC standard Synchronous DRAMs (SDRAM) Performance: -10 fCK tAC Max. Clock frequency Max. access time from clock 66 MHz @ CL=2 100 MHz @ CL=3 9 ns @ CL=2 8 ns @ CL=3

HYS64V2100G Distributors

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HYS64V2100G 3.3V 64-Bit SDRAM Module 3.3V 72-Bit SDRAM Module Siemens

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