SFR35F60P2 Datasheet (Silan Microelectronics) - 600V SUPER-FAST RECOVERY RECTIFIER

SFR35F60P2, 600V SUPER-FAST RECOVERY RECTIFIER

SFR35F60P2 is a Super-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial technology.

The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time.

Accuracy epitaxial dope control, advanced planar junction

SFR35F60P2 Features

* Ultrafast 60 Nanosecond Recovery Time

* High Current Capability

* Low Forward Voltage Drop

* High surge current capability

* Low reverse current leakage

* 175C Operating Junction Temperature ORDERING INFORMATION Part No. SFR35F60P2 Package TO-247-2L Marking 35F60P2 H