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SGT25U120FD1P7 1200V FIELD STOP IGBT

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Description

Silan Microelectronics SGT25U120FD1P7_Datasheet 25A, 1200V FIELD STOP IGBT .
The SGT25U120FD1P7 field stop IGBT adopts Silan Trench Gate Field Stop IV+ technology, features low conduction loss and switching loss.

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Features

* low conduction loss and switching loss. This device is applicable to UPS, SMPS, and PFC fields. FEATURES
* 25A, 1200V, VCE(sat)(typ. )=2.2V@IC=25A
* Low conduction loss
* Ultra-fast switching
* High breakdown voltage C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE SGT 25 U 120 F D IGBT seri

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