SVD2N60T - 600V N-Channel MOSFET

Silan Microelectronics

SVD2N60T Datasheet Preview — Preview of SVD2N60T PDF

Datasheet Details

Part number	SVD2N60T
Manufacturer	Silan Microelectronics
File Size	439.03 KB
Description	600V N-Channel MOSFET
Datasheet	SVD2N60T_SilanMicroelectronics.pdf

SVD2N60T Product details

Description

2 SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary Rin TM S1 3 1.Gate 2.Drain 3.Source structure DMOS technology.The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are widely used in AC-DC power suppliers, DC-DC conve

Features

∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ. )=4.0Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

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Published: Jan 31, 2012 |