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SVD2N60T Datasheet - Silan Microelectronics

SVD2N60T 600V N-Channel MOSFET

2 SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary Rin TM S1 3 1.Gate 2.Drain 3.Source structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize.

SVD2N60T Features

* ∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ.)=4.0Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD2N60T Package TO-220-3L Marking SVD2N60T Shipping 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Drain-Source Voltage

SVD2N60T Datasheet (439.03 KB)