SVD2N60M Datasheet (Silan Microelectronics)

SVD2N60M, 600V N-CHANNEL MOSFET

SVD2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provi

SVD2N60M Features

* ∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ.)=4.0Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD2N60M SVD2N60M SVD2N60F SVD2N60T SVD2N60D SVD2N60DTR Package TO-251-3L TO-251D-3L TO-220F-3L TO-220-3L TO-252-2L TO-252-2L Marking SVD2N60M S