SVD2N65M Datasheet (Silan Microelectronics)

SVD2N65M, 650V N-CHANNEL MOSFET

SVD2N65M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM 2 structure VDMOS technology.

The improved 1 3 TO-251-3L planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-stat

SVD2N65M Features

* TO-220-3L TO-220F-3L ∗ ∗ ∗ ∗ ∗ 2A, 650V,RDS(on)(typ.)=4.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD2N65M SVD2N65F SVD2N65T SVD2N65D SVD2N65DTR Package TO-251-3L TO-220F-3L TO-220-3L TO-252-2L TO-252-2L Marking SVD2