SVD7N60F Datasheet - Silan Microelectronics

SVD7N60F 600V N-CHANNEL MOSFET

SVD7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide su.

SVD7N60F Features

* ∗ 7A,600V,RDS(on) typ =0.96Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD7N60T SVD7N60F Package TO-220-3L TO-220F-3L Marking SVD7N60T SVD7N60F Shipping 50Unit/Tube 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwi

SVD7N60F Datasheet (513.71 KB)