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SVD7N60T, SVD7N60F Datasheet - Silan Microelectronics

SVD7N60T 600V N-CHANNEL MOSFET

SVD7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide su.

SVD7N60T Features

* ∗ 7A,600V,RDS(on) typ =0.96Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD7N60T SVD7N60F Package TO-220-3L TO-220F-3L Marking SVD7N60T SVD7N60F Shipping 50Unit/Tube 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwi

SVD7N60F_SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVD7N60T, SVD7N60F. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVD7N60T, SVD7N60F

Manufacturer:

Silan Microelectronics

File Size:

513.71 KB

Description:

600v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVD7N60T, SVD7N60F.
Please refer to the document for exact specifications by model.

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SVD7N60T SVD7N60F 600V N-CHANNEL MOSFET Silan Microelectronics

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