SVF3N50D Datasheet - Silan Microelectronics

MOSFET

SVF3N50D Features

* ∗ 3A,500V,RDS(on)(typ.)=2.7Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF3N50D SVF3N50DTR SVF3N50MJ Package Type TO-252-2L TO-252-2L TO-251J-3L Marking SVF3N50D SVF3N50D SVF3N50MJ Material Pb free Pb free Pb fre

SVF3N50D General Description

SVF3N50D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide super.

SVF3N50D Datasheet (404.99 KB)

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SVF3N50D

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Silan Microelectronics

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404.99 KB

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Mosfet.

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SVF3N50D Features

SVF3N50D General Description

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