SVF3N80D Datasheet - Silan Microelectronics

800V N-CHANNEL MOSFET

SVF3N80D Features

* ∗ 3A, 800V, RDS(on)(typ.)=3.8Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF3N80M SVF3N80F SVF3N80D SVF3N80DTR Package Type TO-251-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVF3N80M SVF3N80F SVF3N80D SVF3N80D Mat

SVF3N80D General Description

SVF3N80M/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide s.

SVF3N80D Datasheet (608.65 KB)

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Datasheet Details

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SVF3N80D

Manufacturer:

Silan Microelectronics

File Size:

608.65 KB

Description:

800v n-channel mosfet.

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SVF3N80D 800V N-CHANNEL MOSFET Silan Microelectronics

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SVF3N80D Features

SVF3N80D General Description

Datasheet Details

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