SVFP7N65CFJD Datasheet (Silan Microelectronics)

SVFP7N65CFJD, 650V N-CHANNEL MOSFET

SVFP7N65CFJD/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switch

SVFP7N65CFJD Features

* 7A, 650V, RDS(on)(typ.)=1.1@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability NOMENCLATURE 2 1 123 3 TO-251J-3L 1.Gate 2.Dratin 3.Source 123 TO-220FJD-3L 1 3 TO-252-2L S V F PX N X X C A X Silan VDMOS Code of F-Cell process PASSIVATION Nomin