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Silan Microelectronics
SVG104R5NT(S)(F)(KL)(S6)_Datasheet
120A, 100V N-CHANNEL MOSFET
DESCRIPTION
SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems.
FEATURES
2
1 3
1.Gate 2.Drain 3.Source
123
TO-262L-3L
123
TO-220F-3L
Low gate charge Low Crss Fast switching Improved dv/dt capability
123 TO-220-3L
1 3
TO-263-2L TO-263-6L
ORDERING INFORMATION
Part No.
SVG104R5NT Datasheet
